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| MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant FEATURES Ultra Broad Bandwidth: 50 MHz to 40 GHz Functional Bandwidth : 50 MHz to 50 GHz Low Current consumption. * -10mA for low loss state *+10mA for Isolation state M/A-COM's unique AlGaAs hetero-junction Rev. V2 anode technology. Silicon Nitride Passivation Polymer Scratch protection Yellow areas indicate bond pads DESCRIPTION M/A-COM's MA4AGSW8-1 is an Aluminum-GalliumArsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM's patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. Absolute Maximum Ratings @ TAMB = +25C Parameter Operating Temperature Storage Temperature Incident C.W. RF Power Breakdown Voltage Bias Current Assembly Temperature Junction Temperature Maximum Rating -55C to +125C -55C to +150C +23dBm C.W. 25V 25mA +300C < 10 sec +175C APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components. Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85C. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant Electrical Specifications @ TA = 25C, +/-15mA bias current and 0V (On-wafer measurements) Rev. V2 RF SPECIFICATIONS PARAMETER INSERTION LOSS FREQUENCY BAND 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz 0.05 - 18 GHz 18 - 26 GHz 26 - 40 GHz MIN - TYP 1.5 1.8 2.0 32 32 32 15 15 20 MAX 2.0 2.1 2.3 - UNITS dB dB dB dB dB dB dB dB dB ISOLATION 1 30 30 30 10 13 10 INPUT/OUTPUT RETURN LOSS - *Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction diode port in low loss = 22 dB Typical. Parameter F ( GHz ) Test Conditions Typical Value Units Switching Speed* ( 10-90 % RF Voltage ) 10.0 +/- 5V TTL Compatible PIN Diode Driver 20 nS *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 ohms to achieve 15 ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant Typical R.F. Performance (Probed on Wafer) @ +25C Loss Rev. V2 Insertion Loss Frequency ( GHz ) Isolation Isolation ( dB ) Frequency ( GHz ) Return Loss Loss ( dB ) Frequency ( GHz ) 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant Operation of the MA4AGSW8-1 Switch The application of either a +15 mA or -15 mA DC bias current to the selected output port will provide the low insertion loss state. Typically this low loss, "ON" bias voltage through (3) series diodes is 4.5 Volts maximum. All isolated ports are set to 0V at 0 mA, or, to improve switching speed and isolation, a back bias of 5V/0 mA may also be applied. RF to DC bias networks are required on all RF ports. To switch the individual RF ports on and off, a simple single +5V, PIN diode supply, with a TTL gate driver can be used to supply current for the low loss state or 0 V back bias for isolation . In this bias scheme, +5V through a current limiting resistor would be applied at the common port, J1 and each RF port would be connected to a TTL gate. Low loss would occur when the selected gate voltage, TTL0, at the output port is 5V/+15 mA and isolation would occur when the selected gate voltage,TTL1, is -5V/0mA. For faster switching speeds,< 20 nS, a 5V ,PIN diode TTL driver should be employed to help remove the diode stored charge with back bias. Rev. V2 MA4AGSW8-1 Schematic and Driver Bias Connections TYPICAL DRIVER CONNECTIONS Input Port J1 J1 J1 J1 J1 J1 J1 J1 Output Ports -15mA @ J2 -15mA @ J3 -15mA @ J4 -15mA @ J5 -15 mA @ J6 -15mA @ J7 -15mA @ J8 -15mA @ J9 Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Isolation Isolation Notes: Low Loss = -15mA applied at the specified Output Port. (A dc ground return at port J1 must be provided) Isolation = 0 Volts applied at the specified Output Ports. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant Chip Dimensions and Bonding Pad Locations (In Yellow) Rev. V2 I mils min max min mm max Dimension A B C D E F G H I Bond Pads 5 92.7 49.4 84.8 56.9 41.5 20.6 28.3 42.3 3.7 3.7 93.9 50.6 85.2 57.3 41.9 21.0 28.7 42.7 4.2 4.2 2.355 1.255 2.153 1.445 1.055 0.523 0.720 1.074 0.094 0.094 2.385 1.285 2.163 1.455 1.065 0.533 0.730 1.084 0.107 0.107 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant ASSEMBLY INSTRUCTIONS CLEANLINESS The chip should be handled in a clean environment. Rev. V2 STATIC SENSITIVITY This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling. GENERAL HANDLING The protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode's anode. Die should primarily be handled with vacuum pickup tools, or alternatively with plastic tweezers. ASSEMBLY TECHNIQUES The MA4AGSW8-1, AlGaAs switch is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. SOLDER DIE ATTACH Only solders which do not scavenge gold, such as 80Au/20Sn or Indalloy #2 is recommended. Do not expose die to temperatures greater than 300C for more than 10 seconds. CONDUCTIVE EPOXY DIE ATTACH Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. Cure epoxy per manufacturer's schedule. Typically 150C for 1 hour. RIBBON/WIRE BONDING Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" at www.macom.com. Ordering Information Part Number MA4AGSW8-1 Packaging Waffle Pack 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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